tm february 2009 FFD04H60S 4 a, 600 v, hyperfast ii diode ?2009 fairchild semiconductor corporation FFD04H60S rev. a www.fairchildsemi.com 1 FFD04H60S features ? hyperfast recovery, t rr = 60 ns (@ i f = 4 a) ? max forward voltage, v f = 2.1 v (@ t c = 25c) ? 600v reverse voltage and high reliability ? avalanche energy rated applications ? general purpose ? switching mode power supply ? free-wheeling diode for motor application ? power switching circuits 4 a, 600 v, hyperfast ii diode the FFD04H60S is a hyperfast ii diode and silicon nitride passivated ion-implanted epitaxial planar construction. this device is intended for use as freewheeling/clamping diodes in a variety of switching power supplies and other power switching applications. its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. absolute maximum ratings t c = 25 o c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter rating unit v rrm peak repetitive reverse voltage 600 v v rwm working peak reverse voltage 600 v v r dc blocking voltage 600 v i f(av) average rectified forward current @ t c = 130 o c 4 a i fsm non-repetitive peak surge current 60hz single half-sine wave 40 a t j , t stg operating and storage temperature range -65 to +150 o c symbol parameter rating unit r jc maximum thermal resistance, junction to case 4.0 o c/w device marking device package reel size tape width quantity f04h60s FFD04H60S d-pak 13?dia - 2500 1 2 3 dpak (to252) 1 2 3 dpak (to-252) ? rohs compliant
FFD04H60S 4 a, 600 v, hyperfast ii diode www.fairchilds emi.com 2 electrical characteristics t c = 25 o c unless otherwise noted symbol parameter min. typ. max. unit v f 1 i f = 4 a i f = 4 a t c = 25 o c t c = 125 o c - - - - 2.1 1.7 v i r 1 v r = 600 v v r = 600 v t c = 25 o c t c = 125 o c - - - - 100 200 a t rr i f = 1 a, di/dt = 100 a/s , v cc = 30 v i f = 4 a, di/dt = 100 a/s , v cc = 390 v t c = 25 o c t c = 25 o c - - 19 25 - 60 ns i rr q rr i f = 4 a, di/dt = 100 a/ s, v cc = 390 v t c = 25 o c - - 1.5 18 - - a nc w avl avalanche energy ( l = 40 mh) 4 - - mj test circuit and waveforms notes: 1: pulse: test p u lse width = 300 s, duty cycle = 2% ?2009 fairchild semic onductor corporation FFD04H60S rev. a
FFD04H60S 4 a, 600 v, hyperfast ii diode www.fairchildsemi.com 3 typical performance characteristics figure 1. typical forward voltage drop vs. forward current figure 2. typical reverse current vs. reverse voltage figure 3.typical junction capacitance figure 4. typical reverse recovery time vs. di/dt figure 5. typical reverse recovery current vs. di/dt figure 6. forward current derating curve 0 100 200 300 400 500 0.001 0.01 0.1 1 10 t c = 75 o c t c = 25 o c t c = 100 o c reverse current , i r [ a ] reverse voltage, v r [v] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.1 1 10 20 t c = 75 o c t c = 100 o c forward current, i f [a] forward voltage, v f [v] t c = 25 o c 0.1 1 10 100 10 20 30 40 50 60 capacitances , cj [pf] typical capacitance at 0v = 55 pf reverse voltage, v r [v] 100 200 300 400 500 10 20 30 40 t c = 75 o c i f = 4a t c = 25 o c t c = 100 o c reverse recovery time, t rr [ns] di/dt [ a/ s ] 25 50 75 100 125 150 0 3 6 9 12 15 18 average forward current, i f(av) [a] case temperature, t c [ o c ] 100 200 300 400 500 0 2 4 6 8 t c = 75 o c i f = 4a t c = 25 o c t c = 100 o c reverse recovery current, i rr [a] di/dt [ a/ s ] ?2009 fairchild semic onductor corporation FFD04H60S rev. a
FFD04H60S 4 a, 600 v, hyperfast ii diode www.fairchildsemi.com 4 mechanical dimensions ?2009 fairchild semic onductor corporation FFD04H60S rev. a
FFD04H60S 4 a, 600 v, hyperfast ii diode www.fairchildsemi.com 5 ?2009 fairchild semiconductor corporation FFD04H60S rev. a
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